Method and apparatus for enhanced purification of

专利名称：Method and apparatus for enhanced

purification of high-purity metals

发明人：Kishio Tayama,Toshiaki Hodozuka申请号：US106135申请日：20030702

公开号：US200400838A1公开日：20040506

专利附图：

摘要：A 99.99% pure indium feed is charged into a crucible and heated to 1250 ° C. byan upper heater in a vacuum atmosphere at 1×10Torr, whereupon indium evaporates,condenses on the inner surfaces of an inner tube and drips to be recovered into a liquid

reservoir in the lower part of a tubular member, whereas impurity elements having alower vapor pressure than indium stay within the crucible. The recovered indium mass inthe liquid reservoir is heated to 1100° C. by a lower heater and the resulting vapors ofimpurity elements having a higher vapor pressure than indium pass through diffuserplates in an upper part of the tubular member to be discharged from the system,whereas the indium vapor recondenses upon contact with the diffuser plates and returnsto the liquid reservoir, yielding 99.9999% pure indium, while preventing the loss ofindium.

申请人：DOWA MINING CO., LTD.

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