Semiconductor device with reduced high voltage ter

专利名称：Semiconductor device with reduced high

voltage termination area and highbreakdown voltage

发明人：Shibib, Muhammed Ayman申请号：EP94309006.8申请日：19941205公开号：EP0660416A1公开日：19950628

专利附图：

摘要：A semiconductor device (12) with reduced high voltage termination area andhigh breakdown voltage. The device comprises first and second field shield plates (46),

(48). The first field shield plate (46) is disposed above a high voltage first impurity region(22) and a junction extension doped region (42) and is in contact with a conductivematerial (26) which comprises the high voltage terminal of the device (12). A second fieldshield plate (48) is disposed above a low voltage second impurity region (30) and thejunction extension doped region (42) and is covered by an extended portion (35) of a lowvoltage source contact (34).

申请人：AT&T Corp.

地址：32 Avenue of the Americas New York, NY 10013-2412 US

国籍：US

代理机构：Watts, Christopher Malcolm Kelway, Dr.

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