Semiconductor device having an insulated gate

专利名称：Semiconductor device having an insulated

gate

发明人：Christopher Harris,Andrei Konstantinov,Erik

Janzen

申请号：US08/829481申请日：19970328公开号：US05900648A公开日：19990504

摘要：A semiconductor device comprises a semiconductor layer of SiC and aninsulating layer thereon for insulating the SiC layer with respect to a metal plateconstituting a gate and connectable to a voltage for creating a conducting surfacechannel at a SiC layer-insulating layer interface, wherein at least a portion of theinsulating layer closest to the interface is made of a crystalline material which is

substantially lattice-matched to SiC and has substantially the same coefficient of thermalexpansion as SiC; and wherein the material has AlN as the only component or as a majorcomponent of an alloy with insulating properties.

申请人：ABB RESEARCH LTD.

代理机构：Pollock, Vande Sande & Amernick

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