专利名称：Isolated trench MOSFET
发明人：Richard K. Williams,Donald Ray Disney,Wai
Tien Chan
申请号：US12002358申请日：20071217
公开号：US20080237704A1公开日：20081002
专利附图：
摘要：An isolation structure for a semiconductor device comprises a floor isolationregion, a dielectric filled trench above the floor isolation region and a sidewall isolationregion extending downward from the bottom of the trench to the floor isolation region.
This structure provides a relatively deep isolated pocket in a semiconductor substratewhile limiting the depth of the trench that must be etched in the substrate. A MOSFET isformed in the isolated pocket.
申请人：Richard K. Williams,Donald Ray Disney,Wai Tien Chan
地址：Cupertino CA US,Cupertino CA US, CN
国籍：US,US,CN
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